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      Mobile
      WIPS214632-9H
      Description 
      The WIPS214632-9H is a MultiMode and MultiBand (MMMB) Power Amplifier Module (PAM) that supports
3G/4G/5G NR handsets and operates efficiently in WCDMA, TD-SCDMA, LTE and 5G NR modes. 
The InGaP die for PA, the silicon die for controller, the silicon SOI die for RF Switches and passive components
are mounted on a multi-layer laminate substrate. 
Output power is controlled by varying the input power and VCC is adjusted using a DC/DC 
converter to maximize efficiency for each power level.
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      SPECIFICATIONS
      Description MultiMode and MultiBand (MMMB) Power Amplifier Module (PAM) Support Bands CDMA: BC0, BC1, BC4, BC6, BC10, BC15
      WCDMA: I, II, III, IV, V, VIII, IX
      TD-SCDMA: 34, 39
      FDD LTE LB: 5, 8, 12, 13, 17, 20, 26, 28, 71
      MB: 1, 2, 3, 4, 9, 25, 66
      HB: 7, 30
      TDD LTE: 34, 38, 39, 40, 41
      5G NR LB: 5, 8, 12, 13, 17, 20, 26, 28, 71
      MB:
      Package [mm] 4.0 x 6.8 x 0.7 RF Frequency [MHz]
      Typical Linear LTE Power [dBm] Supply Voltage [v] 3.4
      Typical Gain [dB] Typical PAE [%]
      Powrer Mode APT compatible Control MIPI®v1.1
      FEATURES
      Optimized for APT DC/DC Operation
      Fully Programmable MIPI Digital Control
      MIPI Programmable Bias Modes Optimize Best 4G/5G Efficiency / Linearity Performance Minimize DG09 for 3G
      UE Power Class 2; HPUE Support
      (4G) Uplink CA B39(up to 35 MHz), B1, 2/25, 3, 4, 7, 38, 40, 41(up to 40MHz)
      Small and Low Package Profile - 4.0 mm x 6.8 mm x 0.7mm / - 42-pad configuration
      APPLICATIONS
      Multiband 3G/4G LTE/5G NR Handsets
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