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Mobile
WIPS214632-9H
Description온라인문의The WIPS214632-9H is a MultiMode and MultiBand (MMMB) Power Amplifier Module (PAM) that supports 3G/4G/5G NR handsets and operates efficiently in WCDMA, TD-SCDMA, LTE and 5G NR modes. The InGaP die for PA, the silicon die for controller, the silicon SOI die for RF Switches and passive components are mounted on a multi-layer laminate substrate. Output power is controlled by varying the input power and VCC is adjusted using a DC/DC converter to maximize efficiency for each power level.
| Description | MultiMode and MultiBand (MMMB) Power Amplifier Module (PAM) | Support Bands | CDMA: BC0, BC1, BC4, BC6, BC10, BC15 WCDMA: I, II, III, IV, V, VIII, IX TD-SCDMA: 34, 39 FDD LTE LB: 5, 8, 12, 13, 17, 20, 26, 28, 71 MB: 1, 2, 3, 4, 9, 25, 66 HB: 7, 30 TDD LTE: 34, 38, 39, 40, 41 5G NR LB: 5, 8, 12, 13, 17, 20, 26, 28, 71 MB: |
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| Package [mm] | 4.0 x 6.8 x 0.7 | RF Frequency [MHz] | |
| Typical Linear LTE Power [dBm] | Supply Voltage [v] | 3.4 | |
| Typical Gain [dB] | Typical PAE [%] | ||
| Powrer Mode | APT compatible | Control | MIPI®v1.1 |
- FEATURES
- Optimized for APT DC/DC Operation
- Fully Programmable MIPI Digital Control
- MIPI Programmable Bias Modes Optimize Best 4G/5G Efficiency / Linearity Performance Minimize DG09 for 3G
- UE Power Class 2; HPUE Support
- (4G) Uplink CA B39(up to 35 MHz), B1, 2/25, 3, 4, 7, 38, 40, 41(up to 40MHz)
- Small and Low Package Profile - 4.0 mm x 6.8 mm x 0.7mm / - 42-pad configuration
- APPLICATIONS
- Multiband 3G/4G LTE/5G NR Handsets
- PRODUCT IMAGES
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