WiPAM WIP22542 is a Power Amplifier Module (PAM) that supports LTE handsets and
operates efficiently in LTE bands from 3.3 GHz to 3.8 GHz. 

The module is fully programmable through a Mobile Industry Processor Interface (MIPI®).

The PAM consists of a single LTE Power Amplifier (PA) block and a PA Control logic block
RF input/output ports internally matched to 50 Ω to reduce the number of external components.
A CMOS integrated circuit uses standard MIPI controls to provide the internal control interface
and operation. Extremely low leakage current maximizes handset standby time.

The PA die, Control die and passive components are mounted on a multi-layer laminate substrate.
The WIP22542 is housed in a 2.0 mm x 2.5 mm x 0.8 mm, 10-pad MCM, SMT package which is
a more highly manufacturable, low cost solution. 

The WIP22542 supports TD-LTE B42, B43. Output power is controlled by varying the input power
and VCC is adjusted using a DC/DC converter to maximize efficiency for each power level.